We demonstrated a membrane microcavity (MC) fabrication technique and investigated the lasing characteristics of the rectangular ZnO membrane MC. The ZnO membrane MC generated excellent lasing features including nonlinear behavior of output intensity and linewidth narrowing. By using this fabrication approach, sundry MCs with desired shapes can be made.

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We investigate the imaging properties of high refractive index microspheres, the magnification, and the diameter-dependent resolution. Interestingly, the resolution shows dependent to the refractive index of the immersion liquids. Contrary to previous studies, the magnification and the resolution do not correlate with the diameter of the microlenses.

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The photonic bandgaps of 3D liquid photonic crystals, blue-phase liquid crystal, can be electrically modulated over a wide spectral range by DC fields. The bandgap can be reversibly shifted to more than 200 nm away from the original wavelength. Besides, by controlling the polymerization-induced morphology variations, the bandgap can also be expanded from a bandwidth of around 30 nm to at least 310 nm, for the first time a “white” blue phase is observed. The bandgap modulation, including shifting or expansion can be independently manipulated at any lattice direction. Such highly tunable photonic crystals have great potential for photonic applications, including 3D lasers, nonlinear optics and photonic integrated circuits.

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We show that a waveguide photodetector consists of a germanium strip on a silicon-on-insulator waveguide can be operated at a slow-light mode. By carefully designing a one-dimensional photonic crystal and adiabatic taper, the effective absorption coefficient of our device can be enhanced to 0.8 dB/µm at 1600 nm wavelength, which is about 1 order of magnitude improvement compared to bulk Ge

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Extended detection wavelengths from 4.2 to 6.5 m by increasing the InAs thickness from 5 to 10 MLs are observed for type-II InAs/GaSb superlattice infrared photo-diodes. Reduced responsivity and detectivity values of the device suggest that different n-type contact layers and carrier collection electrodes should be adopted in the future.

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This graphene detector is fabricated with semiconductor process, in which the graphene is transferred through wet chemical transfer process and there are metal electrodes formed by lithography, e-gun evaporation and lift-off process. The component performance is similar to the p-n junction, whose photocurrent rises exponentially with increasing bias voltage.

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