Session Index

Display Technology

Display Technology III
Saturday, Dec. 5, 2015  09:00-10:30
Chair: Cheng-Huan Chen
Room: Delta B08(B1F)
Notes:
09:00 - 09:15 Paper No.  2015-SAT-S0703-O001
Shu-Ming Hsu The Influence of Mechanical Bending on the Performance of SnO Thin-Film Transistors


In this paper, p-channel tin monoxide (SnO) thin-film transistors (TFTs) have been successfully demonstrated on flexible polyimide foil substrates. The TFT characteristics under cylindrical bending tests are investigated for the first time. A negative correlation between the field-effect mobility and the applied tensile strain is observed.

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09:15 - 09:30 Paper No.  2015-SAT-S0703-O002
Chun-Hsin Tai A Table-top Floating Image System with Tire-lens Structure


A new structure of horizontal parallax light field 3D floating image display system was proposed, which composed of pico-projectors, pinhole array and sub-lens array with tire shape. The main purpose of this system is to achieve 360 degree viewing zone in horizontal direction and widely distributed light field in vertical direction.

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09:30 - 09:45 Paper No.  2015-SAT-S0703-O003
Nidhi Tiwari Achieving high field effect mobility and bias stability in IZO/IGZO thin film transistor by inserting ultra- thin ZnO layer


The performance and stability of IZO/IGZO TFTs were improved by inserting 1 nm ultra-thin ZnO layer in between. The devices were compared to their counterparts and enabled high-field effect mobility (~ 14 cm2/Vs) with excellent photo-bias stability (ΔVth ~ -2.5V) to be suitable in high-resolution and large-sized new generation displays.

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09:45 - 10:00 Paper No.  2015-SAT-S0703-O004
Shu-Chun Chang Laser speckle noise suppression using polymer dispersed liquid crystals


The speckle noise suppression was demonstrated by using the polymer dispersed liquid crystals that were prepared by doping the monomer (0C) into the nematic liquid crystals (NLCs). With 3 wt% 0C into NLC, the best reduction rate about 59 % would be produced after application of 3 V external voltage.

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10:00 - 10:15 Paper No.  2015-SAT-S0703-O005
Ram Narayan Chauhan Silicon induced high mobility and stability in IZO TFTs


A stable and high mobility silicon induced IZO TFT has been fabricated by dual co-sputtering of silicon and IZO targets. This leads high field effect mobility of 10 cm2/Vs and photo-biased stability of -1.5V- enabling better oxide TFT to be utilized in hybrid inverter for large area electronics.

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10:15 - 10:30 Paper No.  2015-SAT-S0703-O006
Chao-Yuan Tan Solution-Processed, Air-Stable N-type Organic Single Crystal Microribbon Transistors


We report a new type of organic microribbons via solution phase self-assembly from a conjugated small molecule N,N'-bis[2-(4-fluoro-phenyl)-ethyl]-3,4,9,10- perylenetetradicarboximide (4FPEPTC) for use in organic field effect transistors. Devices based on a network of 4FPEPTC microribbons show a typical n-channel field effect behavior with average ON/OFF current ratio >103 and exhibit excellent stability in ambient air over 90 days.

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