|
09:00 - 09:15
|
Paper No. 2015-SAT-S0703-O001
|
| Shu-Ming Hsu
|
The Influence of Mechanical Bending on the Performance of SnO Thin-Film Transistors
In this paper, p-channel tin monoxide (SnO) thin-film transistors (TFTs) have been successfully demonstrated on flexible polyimide foil substrates. The TFT characteristics under cylindrical bending tests are investigated for the first time. A negative correlation between the field-effect mobility and the applied tensile strain is observed.
Preview abstract
|
|
|
09:15 - 09:30
|
Paper No. 2015-SAT-S0703-O002
|
| Chun-Hsin Tai
|
A Table-top Floating Image System with Tire-lens Structure
A new structure of horizontal parallax light field 3D floating image display system was proposed, which composed of pico-projectors, pinhole array and sub-lens array with tire shape. The main purpose of this system is to achieve 360 degree viewing zone in horizontal direction and widely distributed light field in vertical direction.
Preview abstract
|
|
|
09:30 - 09:45
|
Paper No. 2015-SAT-S0703-O003
|
| Nidhi Tiwari
|
Achieving high field effect mobility and bias stability in IZO/IGZO thin film transistor by inserting ultra- thin ZnO layer
The performance and stability of IZO/IGZO TFTs were improved by inserting 1 nm ultra-thin ZnO layer in between. The devices were compared to their counterparts and enabled high-field effect mobility (~ 14 cm2/Vs) with excellent photo-bias stability (ΔVth ~ -2.5V) to be suitable in high-resolution and large-sized new generation displays.
Preview abstract
|
|
|
09:45 - 10:00
|
Paper No. 2015-SAT-S0703-O004
|
| Shu-Chun Chang
|
Laser speckle noise suppression using polymer dispersed liquid crystals
The speckle noise suppression was demonstrated by using the polymer dispersed liquid crystals that were prepared by doping the monomer (0C) into the nematic liquid crystals (NLCs). With 3 wt% 0C into NLC, the best reduction rate about 59 % would be produced after application of 3 V external voltage.
Preview abstract
|
|
|
10:00 - 10:15
|
Paper No. 2015-SAT-S0703-O005
|
| Ram Narayan Chauhan
|
Silicon induced high mobility and stability in IZO TFTs
A stable and high mobility silicon induced IZO TFT has been fabricated by dual co-sputtering of silicon and IZO targets. This leads high field effect mobility of 10 cm2/Vs and photo-biased stability of -1.5V- enabling better oxide TFT to be utilized in hybrid inverter for large area electronics.
Preview abstract
|
|
|
10:15 - 10:30
|
Paper No. 2015-SAT-S0703-O006
|
| Chao-Yuan Tan
|
Solution-Processed, Air-Stable N-type Organic Single Crystal Microribbon Transistors
We report a new type of organic microribbons via
solution phase self-assembly from a conjugated small molecule
N,N'-bis[2-(4-fluoro-phenyl)-ethyl]-3,4,9,10-
perylenetetradicarboximide (4FPEPTC) for use in organic
field effect transistors. Devices based on a network of
4FPEPTC microribbons show a typical n-channel field effect
behavior with average ON/OFF current ratio >103 and exhibit
excellent stability in ambient air over 90 days.
Preview abstract
|
|