Session Index

Solid State Lighting

Solid State Lighting IV
Saturday, Dec. 5, 2015  13:10-14:40
Chair: Ivan Moreno,Tsung-Xian Lee
Room: Delta B05(B1F)
Notes:
13:10 - 13:40 Paper No.  2015-SAT-S0804-O001
Ivan Moreno TBA


 
13:40 - 13:55 Paper No.  2015-SAT-S0804-O002
Kai-Chiang Hsu Fabrication of ZnO-based double-heterojunction light-emitting diodes


AlN-ZnO/ZnO/AlN-ZnO double heterojunction structures prepared using rf magnetron cosputtering system were deposited onto p-GaN epilayer. The bandgap emission related to the n-ZnO of the resulting light-emitting diode (LED) was improved and the red emission from the Ga-O interlayer attributed to the outdiffusion of oxygen atoms to the p-GaN epilayer was effectively suppressed by introducing the cosputtered AlN-ZnO barrier layer.

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13:55 - 14:10 Paper No.  2015-SAT-S0804-O003
Yung-Chang Jen The Study of High-fidelity Candle-like Lighting Device with High-power LEDs


In this paper, we propose an candle-like lighting device based on a high-power LED. The device includes a light source and a light body with a function of diffuser. According to the combination of light guide and scattering element, we successfully create a lighting behavior that is similar to real candle lighting device.

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14:10 - 14:25 Paper No.  2015-SAT-S0804-O004
Bao-Jen Shih Influence of chip size on hotspot temperature in a pc-WLED with remote-dome phosphor package


Simulation using ray-tracing and finite element analysis is carried out to obtain the hotspot temperature in a remote-dome phosphor packaged pc-WLED. The influence of chip size on the hotspot temperature is simulated and discussed.

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14:25 - 14:40 Paper No.  2015-SAT-S0804-O005
Chih-Hsien Cheng GaN LED grown on amorphous Si-rich SixC1-x


Epitaxy of GaN LED on PECVD synthesized amorphous Si-rich SixC1-x is demonstrated without using GaN buffer. The GaN LED on Si-rich SixC1-x/SiO2/Si reveals turn-on voltage of 2.62 V, output power of 65 mW and EQE of 31%.

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