Session Index

Solid State Lighting

Solid State Lighting V
Saturday, Dec. 5, 2015  15:40-17:10
Chair: Meng-Chyi Wu,Jong-Woei Whang
Room: Delta B05(B1F)
15:40 - 15:55 Paper No.  2015-SAT-S0805-O001
Tsung-Yan Tsai Hybrid Light-emitting Devices Comprising Titanium Dioxide Nanorods and Tungsten Oxide Layers

TiO2 nanorods with length of 100-300 nm were prepared via the hydrothermal method on FTO substrate. Tungsten oxide was inserted between PEDOT and gold electrode to further improve device performance. Inverted light-emitting devices with configuration of FTO/TiO2 nanorods/ionic PF/MEH-PPV/PEDOT:PSS/WO3/Au were fabricated and evaluated.

 Preview abstract
15:55 - 16:10 Paper No.  2015-SAT-S0805-O002
Yung-Lin Chou The Effect of Quantum Well Position on the Performance of Light-Emitting Transistors

The DC and RF analysis of electrical and optical characteristics for light-emitting transistors are demonstrated using software of technology computer-aided design. The results of different quantum well positions in the base region of light-emitting transistors are presented and compared, which shows a trade-off relationship between electrical and optical characteristics.

 Preview abstract
16:10 - 16:25 Paper No.  2015-SAT-S0805-O003
Chi-Hsiang Chang Direct Current Modulation of Transistor Lasers with Franz-Keldysh Absorption

The effect of Franz-Keldysh (FK) photon-assisted tunneling on the direct modulation of transistor lasers (TLs) is investigated in this work. The influences of FK absorption on the optical output and carrier density of TLs are presented, and the results of current modulation show that the optical response becomes less prominent.

 Preview abstract
16:25 - 16:40 Paper No.  2015-SAT-S0805-O004
Teng Sian Ong Effect of Concentration Profile in Continuously Graded Mixed-Host Organic Light Emitting Diode

Continuously graded mixed-host organic light emitting diodes are fabricated using single-source, evaporation of pre-mixed hole- and electron-transport materials. The effect of the evaporation rate on performance and concentration profile of hole- and electron-transport in the mixed-host, light-emitting layer are investigated.

 Preview abstract