Fabrication and mass-production of large-area roll-to-roll (R2R) solution-processed inverted polymer solar cell (PSC) is a necessary step toward commercialization of PSC. We focus on the fabrication of high performance devices from cell to module by the R2R process. We focus on three techniques suitable for mass-production including spray, inkjet-printing and slot-die coating. We introduce our achievements of these techniques in this report. Moreover, we slot-die coated the PSC devices consisting of the blend of low band-gap polymer, PTB7 and PC71BM with power conversion efficiency (PCE) of 7.6%. The PCE of large-area module comprised of series and parallel connection of 20 cells of 11 cm2 in cell size achieved 4.3%. The key points of reducing the PCE loss considering the module pattern design and simple fabrication are discussed. On the other hand, the mini module of 24 cm2 for the application as the power of smart electronics is developed herein. We applied laser ablation technique to manufacture PSC module, enhancing the ITO utilization up to 90% in the module. The efficiency of such a PSC mini module based on the P3HT:PCBM blend can achieve 2.3%. The application of laser ablation on the series modules is demonstrated be good for commercial production process. In this report, we also present some prototypes to show the feasibility of their future OPV application.

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Al2O3 films have been chosen as good passivation layers for reducing surface recombination velocity in manufacturing PERC solar cells. In the ALD process to deposit Al2O3 on the rear side of a silicon wafer, blisters on the surface of the Al2O3 film would usually occur following a subsequent firing process. Here, a novel method is introduced to eliminate the blister problem.

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We investigate the sidewall profile and interface defects of silicon nanorod templates, fabricated by metal-assisted chemical etching, for hybrid photovoltaics. By passivating the nanorod surface with a thin Al2O3 layer, the VOC is further enhanced from 548mV to 568mV, and the PCE achieved 13.33%.

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An array of pyramid structure in realized on the surface of a substrate-thinned backside-illuminated deep-n-well-assisted CMOS photovoltaic device. The deep-n-well layer in standard bulk CMOS process is utilized to maximize the junction area. As-realized photovoltaic device provides a 33.37% ultimate efficiency and a 1.67-mW electrical power under 5-mW 980-nm illumination.

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Phosphorus (P) doping in a super-high density Si quantum dot thin film using a gradient Si-rich oxide multilayer (GSRO-ML) structure is demonstrated by means of post thermal diffusion treatment with N2, O2, and POCl3 forming gas. The effect of heavily P doing on crystalline, electrical, and photovoltaic properties is studied, and the optimal doping concentration is found.

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