Session Index

Photovoltaic Technology

Photovoltaic Technology V.
Saturday, Dec. 5, 2015  15:40-17:10
Chair: Dr. Ziv Hameiri
Room: Delta 104(1F)
15:40 - 15:55 Paper No.  2015-SAT-S0905-O001
Yean-San Long Characteristics of emerging PV measured by real-time one-sweep method under variable indoor light sources

Characterization of emerging PV requires variable indoor light intensity and very slow temporal response. This work provided stable data by removing capacity effect with a Real-Time One-Sweep (RTOS) method, which is useful to measure cell more accurately and rapidly when evaluating performance.

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15:55 - 16:10 Paper No.  2015-SAT-S0905-O002
Po-Wei Chen Graded Ge1-xSnx Photodetectors Fabricated on Si Substrates by Rapid Melt Growth Method

Near-infrared absorption at 2000-nm wavelength is observed for a Ge1-xSnx metal-semiconductor-metal (MSM) photodetector implemented on a Si substrate. The device is fabricated by rapid melt growth method with graded Sn concentration up to 5-10 %, which is higher than the solid solubility (~ 1 %) of Sn in Ge.

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16:10 - 16:25 Paper No.  2015-SAT-S0905-O003
Yung-Chi Yao Polarization-induced doping III-nitride n-i-p solar cells

We design and numerically evaluate a new type of III-nitride n-i-p solar cells whose p- and n-type regions with equal carrier concentration of 3×1018 cm-3 are not generated by extrinsic impurity doping but by the so-called polarization-induced doping. Because of the identical and uniform polarization charges within each unit cell, a smooth spatial variation of potential profile of the device is hence expected, which mitigates the energy band discontinuities at hetero-interfaces, and facilitates transportation and collection of photogenerated carriers with high efficiency. Most importantly, as the conductive n- and p-type regions are formed by electrostatic field ionization, the concentration of field-induced carriers is independent of thermal freezeout effects. Thus the polarization-induced doping III-nitride n-i-p solar cells can provide stable power conversion efficiency, even are operated under the low temperature environment.

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16:25 - 16:40 Paper No.  2015-SAT-S0905-O004
Kuan-Ying Ho Numerical analysis of Si/PEDOT:PSS hybrid solar cell

A numerical simulation model based on the planar Si/PEDOT:PSS hybrid solar cells is developed. The carrier transport in organic materials is presented by adding a Gaussian distributed function of tail states, and the influence of the tail states added to the organic materials is investigated and analyzed. Then the model is verified by the J-V curve fitting compared with the experimental results.

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16:40 - 16:55 Paper No.  2015-SAT-S0905-O005
Xin-Zhang Lin Improvement of bodipy-based bulk heterojunction solar cell using 1,8-diodooctane

In this work, we investigate the effect of a solvent additive, 1,8-diodooctane (DIO), in a bodipy-based bulk-heterojunction solar cells. By using 0.2 vol% DIO, the power conversion efficiency (PCE) increased from 1.97% to 2.49%. This improvement was mostly due to the increase in the fill factor. The photophysical property and microscopic morphology of the device is also discussed.

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16:55 - 17:10 Paper No.  2015-SAT-S0905-O006
Pin-Yao Chen Perovskite Solar Cells Based on Zinc Oxide Nanorod Arrays with High Short-circuit Current Density

Perovskite solar cells based on ZnO nanorod arrays were fabricated and evaluated. ZnO nanorod arrays were prepared via the hydrothermal method. Perovskite films were prepared via the two-step spin-coating process. The best device showed a max short-circuit current density of 28.8 mA/cm2 and PCE of 12.58%.

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