Session Index

Photovoltaic Technology

Poster Session Ⅰ
Friday, Dec. 4, 2015  11:30-12:30
Notes: N/A
Paper No.  2015-FRI-P0901-P001
Joey Phu-Chou Lin Award Candidate The Study of Improving Perovskite Hybrid Photovoltaic Devices by LPPET and Solution Process

Halide perovskites have recently emerged as promising materials because of low-cost and high-efficiency. [1] In this study, we develop a new method, Low-Pressure Proximity Evaporation Technique (LPPET) to fabricate the device. The best PCE is about 12 % based on the ideal thickness and morphology

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Paper No.  2015-FRI-P0901-P002
Fan-Lei Wu Award Candidate Epitaxial Lift-Off for GaAs Substrate Reuse and III-V Solar Cell Applications

Through the epitaxial lift-off (ELO) process using the HF solution mixed with the acetone, the GaAs substrate and III-V photovoltaic device were successfully separated. Additionally, by conducting the ELO method, the GaAs substrate can be reused for four times, revealing that its high potential for the reusable applications.

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Paper No.  2015-FRI-P0901-P003
Chen Si-han Award Candidate Solution p-Doped Fluorescent Polymers for Enhanced Charge Transport of Hybrid Organic- Silicon Photovoltaics

Charge transport across the organic-silicon interface of a hybrid photovoltaic device suffers from large contact resistance due to interface defects and energy band bending. Yet, strategies to tackle this development barrier have been scarce owing to limited low-temperature solutionprocessed approaches.

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Paper No.  2015-FRI-P0901-P004
ChenKang Hsu Award Candidate Fabrication of antireflective silicon nanostructures for multicrystalline silicon solar cells

The texturing process of multicrystalline silicon (mc-Si) wafers was carried out using chemical wet etching followed by reactive ion etching (RIE). Compared to standard alkaline etching or RIE process, a surface modification of mc-Si with low reflectivity and uniform color can be achieved by the combined wet etching/RIE technique.

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Paper No.  2015-FRI-P0901-P005
Sheng-Pang Lin Award Candidate High-Efficiency Planar-Structure Perovskite Solar Cells from Low Pressure and Low Temperature Process

In this research, we use low pressure process to fabricate planar structure of perovskite solar cell. The whole process is completed in atmosphere. The best device has high Jsc of 20.32 mA/cm2 and efficiency of 13.83% due to uniform morphology of perovskite film and appropriate control of everation process.

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Paper No.  2015-FRI-P0901-P006
Ching-Hwa Ho Award Candidate Synthesis and characterization of III-VI M2S3 (M=In, Ga) defect semiconductors available for oxygen sensing and UV photodetection

The III2VI3 series crystals are well-known defect semiconductors available for energy and optoelectronics use due to their defect and optical characteristic for technological application. According to our experimental analysis, the In2S3 has the potential for being a wide-energy-rage absorption material owing to the auxiliary of surface oxide (e.g. In2O3) on it crystalline face while the Ga2S3 crystal can be the substance for fabrication of white lightening device with visible emissions attributed to the intrinsic defects existed in the crystal such as sulfur vacancies. The potential function and fundamental characterization of the M2S3 (M=In, Ga) defect crystals are demonstrated herein.

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Paper No.  2015-FRI-P0901-P007
Chu-Yen Hsiao Award Candidate Optimization of Hybrid Organic-Silicon Nanowires Solar Cells via Back Surface Field

We used digital rotator to stabilize our silicon nanowires etching process. We successfully fabricate a high PCE of 12.33% by adjusting the etching time. Then we apply soluble organic materials to the device’s rear side. These two materials can serve as electron transport layer, which improve the PCE to 12.61%.

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Paper No.  2015-FRI-P0901-P008
Wei-Hsun Huang Award Candidate Improving open circuit voltage for HIT solar cells by changing thickness of substrate

We fabricated HIT solar cells with different wafer thickness in order to discussion the correlation between wafer thickness and solar cell parameters. Through decreasing wafer thickness, we can increase open circuit voltage.

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Paper No.  2015-FRI-P0901-P009
Ci-Wun Chen The Application of Cobalt and Carbon Complex Material on the Counter Electrode of Dye Sensitized Solar Cells

In this report, we use series of cobalt derivative as the counter electrodes (CEs) to repleace the traditional platinum in dye sensitized solar cells (DSSCs). The basic cobalt derivatives, vitamin B12 and Cobalt(II) acetate tetrahydrate, show the capability as the CEs with proper short-circuit current (JSC) and open-circuit voltage (VOC), but the poor conductivity and redox ability resulted in bad fill factor of the device. After mixing the cobalt derivatives with carbon black, the device performances were enhanced obviously. The further improve was done by combine the cobalt derivative and carbon black to form the new type material CoCB as the CE. The great conductivity and redox ability of CoCB improved the JSC of the devie, the optimized device showed power conversion efficiency of 7.44%, indicated that the potential of cobalt derivatives serve as CEs of DSSCs.

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Paper No.  2015-FRI-P0901-P010
Yung-Chi Yao Realizing graded refractive index by employing ZnO nanorods/TiO2 layer to enhance omnidirectional photovoltaic performances of InGaP/GaAs/Ge triple-junction solar cells

In this study, we theoretically and experimentally demonstrate a high performance of antireflection (AR) coating composed of the ZnO nanorods (NRs) and TiO2 layers applied on InGaP/GaAs/Ge triple-junction solar cells. The high performance of this AR coating is due to the realization of a smooth gradient profile of refractive index fabricated by only two physical layers. At device level, we compared the photovoltaic performance of solar cells with and without AR coating, the short-circuit density (JSC) is enhanced by 31.8% and 23.8% for solar cells integrated with the ZnO NRs/TiO2 layer and conventional SiO2/TiO2 double-layer AR (DLAR) coating, respectively. Under a very large incident angle of solar illumination (θ=80°), the ZnO NRs/TiO2 layer remains static JSC enhancement of 35.2%, whereas the JSC enhancement of conventional DLAR coating drops down to 9.4%. Therefore, the proposed ZnO NRs/TiO2 layer with a smoother graded refractive index change is highly promising for the AR coating applications for the next-generation solar cells.

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Paper No.  2015-FRI-P0901-P011

Multi-crystalline silicon (mc-Si) solar cells will be the future mainstream because it can significantly reduce the manufacture cost. However, Electrolumin ality of mc-Si solar cells due to their high density of dislocation and grain boundary. In this study, we developed several programs to colorize the EL grayscale images in order to highlight the defect positions due to the fact that human eyes are more sensitive to colorful than black and white images. Experimental results show that both block algorithms and texture algorithms can clearly show the high efficiency and middle efficiency regions by colors so that the interpretation of EL images of the mc-Si solar cells can be improved. In addition, the texture algorithm can perform more delicate colorization of the structure around a defect. Although the colorization effect of the block algorithm for defect structure is rougher and hazier, it can colorize a specimen in less than 4 seconds while the colorization time of the texture algorithm is less than 8 seconds.

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Paper No.  2015-FRI-P0901-P012
Yu-Chih Su Simulation and Design of Single-Junction GaAs Solar Cells with Selective Filter

According to the results of the rigorous couple wave analysis (RCWA) simulation, we designed a different cut-off selective filter in this research. The surface structure confines the re-emitted photons from radiative recombination, and use Shockley-Queisser detailed balance model to calculate Voc. The Voc of GaAs solar cells has 1.1mV enhancement with 840 nm cut-off wavelength filter.

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Paper No.  2015-FRI-P0901-P013
Ting-Wei Liang The measurement of spatial distribution of the resistance for silicon solar cell by using dark lock-in thermography

Dark Lock-in Thermography (DLIT) is used to calculate the amplitude and phase from the temperature distribution of a silicon solar cell. The resistance is obtained from substituting the amplitude and the phase into heat equation, and then the lower S/N ratio data was removed to acquire the believable resistance distribution.

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Paper No.  2015-FRI-P0901-P014
Po-Han Chen Organic Photovoltaic Devices Prepared with a Low-Band-Gap Polymer for Low Light Applications

In this work, the device performance of organic photovoltaic devices prepared with a low-band-gap polymer was studied under illumination from two artificial light sources indoor. We have found that the power conversion efficiency of the OPV under 600 lux illumination could achieve a high power conversion efficiency of ca. 14%.

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Paper No.  2015-FRI-P0901-P015
Ming-Jer Jeng The performance enhancement of CIGS solar cells by the incorporation of Au and Ag nanoparticles

Application of Au and Ag nanoparticles on CIGS solar cells is investigated in this work. The Au and Ag nanoparticles are deposited by spin-coating method for the consideration of simple process and low cost. There exists a competing effect between metal shadowing and light scattering for different nanoparticle concentrations. The CIGS solar cells with the incorporation of Au and Ag nanoparticles exhibit a photocurrent enhancement of 5.9% and 2.3%, respectively.

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Paper No.  2015-FRI-P0901-P016
Ang Lun Lee Growth of Cu2ZnSnSe4 thin film solar cell prepared by sputtered with ternary target.

Cu2ZnSnSe4(CZTSe) thin films were prepared by sputtering with single Cu, Zn and Sn ternary target, and then annealed in Se vapor at various temperature. SEM, XRD and Raman were used to analyze the Cu, Zn and Sn precursor (CZT precursor) and the second phases of different temperature. The efficiency of CZTSe is about 5%.

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Paper No.  2015-FRI-P0901-P017
YAN SHIH SIANG ETFE used in lightweight crystalline PV modules

In this paper we studied ETFE as the PV module’s frontsheet. It makes the PV modules not only more lightweight but also more reliable. In our test results showed the ETFE has a good performance for crystalline PV modules reliability.

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Paper No.  2015-FRI-P0901-P018
Yu-Chieh Hu Research of quasi-photonic crystal substrate application on the amorphous silicon solar cells

In this research, we study the absorption efficiency enhancement in the amorphous silicon solar cell with a planar type quasi-photonic crystal glass substrate. We report on numerical investigation of a light trapping design consisting of a 2D front-side diffraction photonic crystal and back-side aluminum mirror. The light trapping structure increases absorption with 15.98 %.

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Paper No.  2015-FRI-P0901-P019
Pei-Fang Hung Binary optics for spectrum-division

Binary optics made of polyimide is proposed as a device with high weather resistance for solar spectrum-division. From scalar diffraction theory, the diffraction efficiency of such binary structures is derived. The simulated average diffraction efficiencies for the visible and the infrared spectrum are 15% and 70%, respectively.

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Paper No.  2015-FRI-P0901-P020
Ho-Ching Ni Properties of Cu2ZnSnS4 films by sulfurization of CuS-SnS-ZnS precursors using ditert-butylsulfide at atmospheric pressure

Cu2ZnSnS4 (CZTS) films were prepared by sulfurization of chemical bath deposited (CBD) CuS-ZnS-SnS precursors at atmospheric pressure using ditert-butylsulfide (DTBS). An increment of sulfurization time interval or DTBS admittance at high sulfurization temperatures tended to enable the formation of CZTS structure with improved stoichiometry and optical quality.

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Paper No.  2015-FRI-P0901-P021
Yu-Ling Lin The comparison of direct and remote PECVD deposition of silicon nitride films for potential-induced-degradation resistant solar cells

Potential-induced degradation (PID) becomes a serious issue for solar cell manufactures to guarantee the long-term efficiency of solar cells. Here we investigated the SiNx films deposited by direct and remote PECVD to prevent PID. The results show that the SiNx films deposited by direct PECVD have higher PID resistant.

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