We demonstrate the first observation of photothermoelectric (PTE) effect between gold electrode and electrochemically etched porous silicon (PS). Position-dependent photocurrent measured from the interdigitated gold electrode-coated PS device is from different Seebeck coefficient between PS (low thermal conductivity) and gold (high thermal conductivity). The electrochemical etching conditions of PS affects the PTE effect.

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In this study, a sub-wavelength structure (SWS) on AZO using the rigorous coupled-wave analysis(RCWA) method is presented. Various SWS of different order of taper discussed in detail. The reflectance can be suppressed effectively in height incident degree.

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The performance of GO-passivated solar cell is better than the control cell. Both the lifetime before and after rapid thermal anneal treatment is compared for GO and control samples. We have successfully measured lifetime of small sample after rapid thermal anneal treatment.

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We present a low temperature process (< 180°C) for the fabrications of low dark current density (< 0.2 mA/cm2) Ge/Si photodetectors. The low dark current density of 0.02 mA/cm2 is obtained. This low dark current is attributed to the high quality of the Ge films (XRD FWHM= 485 arsec).

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In this paper, Ti-doped GaZnO (GTZO) quaternary alloys were used as the transparent conductive oxides (TCOs) for Cu(In,Ga)Se2 (CIGS) solar cell application. The results indicated that GTZO thin films showed a high transmittance of 83.04%, a low thin-film resistivity of 1.22×10-4 Ω-cm, and a high figure of merit of 2.72×10-3Ω-1. The CIGS solar cells with high-performance GTZO TCOs exhibited an improved conversion efficiency of 8.136 %. The improved device performances in this study demonstrated a high potential for developing high-performance CIGS solar cells by using GTZO TCOs.

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In this study, the i-SiC buffer layer was inserted between p-SiC and i-Si layers in p-i-n amorphous silicon solar cells using plasma enhanced chemical vapor deposition system. The conversion efficiency of the p-i-n a-Si solar cells with buffer layer was improved from 4.31 % to 4.81 %.

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We analysis the coupling QD structure wirh composite AlGaAs layer advantages in forming intermediate band. In structure design, we convinced that the composite AlGaAs barrier will help to strengthen the intraband absorption. The results revealed that the concentration for AlGaAs equal to 1 inside and 0.5 outside will help in IBSC design.

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In this paper, we evaluated the potential of organic photovoltaic devices (OPVs) for indoor low power applications. The light source was a fluorescent tube. Two different polymer blends were used as the photoactive layers. We have found that the devices fabricated with an electron donor featuring a higher lowest unoccupied molecular orbital exhibited better performance due to its higher photovoltage.

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In this study, a chemical oxidation method was employed to fabricate coral-like Cu2O nano/microstructures on Cu foils as counter electrodes for dye-sensitized solar cells. The Cu2O nano/microstructures were prepared at various sintering temperatures (400, 500, 600 and 700 °C) to investigate the influences of the sintering temperature on the DSSC characteristics.

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This paper proposed an improved method to determine the optimal power point of solar cells with respect to ambient temperature, solar radiation. This method presented a simpler and more exact algorithm, so the power of solar cell is higher. We used Matlab/Simulink to simulate solar cell and maximum power point tracking model.

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In this study, we investigated the effect of BSF on the conversion efficiency of HIT solar cells. For the electrical parameters of the heterojunction solar cells without/with BSF, the conversion efficiency increased from 7.12% to 11.14%, VOC from 0.416 to 0.466 V, JSC from 30.5 to 34.8 mA/cm2, and filled factor of 69 %.

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This paper reports the influence of polarization effect on the lattice-matched InGaN p-n solar cell. Simulation results show that energy band bends seriously at the interface of InGaN and GaN due to thin layer structure. Employing InGaN graded layer to replace GaN can eliminate the hetero-barrier and improve the conversion efficiency of solar cell.

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In this study, the DSSCs with various lengths of ZnO nanorods were deposited on AZO-coated glass substrates by using a solution phase deposition method and investigated in detail.The results indicated that when the lengths of the ZnO NRs increased, and these improvements yield a 96% enhancement in power conversion.

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We varied the relative thickness of mixing and electron transporting layer (ETL) of an organic solar cell based on planar-mixed heterojunction (PMHJ) structure. The optimized power conversion efficiency is 1.99% with the mixing and ETL thicknesses are 50 and 10 nm, respectively.

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We present a p-i-n Ge on Si photodetector grown by RPCVD for normal incidence. The dark current density at -1 V bias is as low as 0.449 mA/cm2. The value of responsivity is 0.15 A/W at -1 V bias under 1310 nm illumination.

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We compared the treatment on Ag anode using UV-Ozone and O2 plasma to affect the electrical and optical performances of organic photovoltaic.

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