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16:10 - 16:40
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Paper No. 2015-FRI-S1002-I001
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Invited Speaker:
Zhifeng Huang
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TBA
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16:40 - 16:55
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Paper No. 2015-FRI-S1002-O001
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| Huang-wei Pan
Award Candidate
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Room temperature mechanical loss of high stress silicon nitride film measured by cantilever ring-down method on double-side coated cantilever
In this paper, the mechanical loss of silicon nitride deposited by PECVD is investigated by using double side coating method to eliminate substrate warping. The mechanical loss angle of high stress un-annealed SiN0.87 film is in the range of 10-5 in room temperature.
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16:55 - 17:10
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Paper No. 2015-FRI-S1002-O002
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| Shuo Hwai
Award Candidate
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Transferring-Free Top-Gated Graphene Transistors Fabricated on Graphene Films Directly Grown on Sapphire Substrates
Transferring-free top-gated graphene transistors are demonstrated by using directly grown graphene on sapphire substrates. The improved field-effect mobility value 138 cm2V-1s-1 suggests that without the film transferring procedure, the device performances can be greatly enhanced. The results have demonstrated the potential of directly grown graphene for transferring-free graphene device fabrications.
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17:10 - 17:25
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Paper No. 2015-FRI-S1002-O003
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| Zun-Yao Syu
Award Candidate
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Ultraviolet AlGaN Light Emitting Diode with Embedded GaN Nanoporous Structure
Ultraviolet (UV) AlGaN light emitting diode with nanopours AlGaN layer was demonstrated through an electrochemical wet etching process. High SiH4 doping concentration n-type AlGaN:Si layer was transferred into the nanoporous AlGaN structure through the doping selective wet etching process. The porous size of the 2.7μm-thick nanoporous AlGaN layer is about 50 to 100nm embedded in the UV-LED structure. The peak wavelengths of the electroluminescence spectra were measured at 372.8nm and 379.6nm for the UV-LED and NP-UV-LED structures, respectively. Low light refractive index of the nanoporous AlGaN layer acted the light reflector and light scattering structure to enhance the light extraction efficiency.
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17:25 - 17:40
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Paper No. 2015-FRI-S1002-O004
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| Chao-Hsuan Chen1
Award Candidate
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Contact coating for low leakage vertical organic transistor
A new method to cover the nano-structures with organic material is developed by downward contact of the structure with the organic solution surface followed by slow pulling up. The pulling speed and viscosity are used to tune the coating morphology from filling to conformal coverage.
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