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09:00 - 09:15
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Paper No. 2015-SAT-S1003-O001
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| Shin-Yi Ho
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Enhancement Mode AlGaN/GaN High Electron Mobility Transistors with Low Current Collapse Using SiO2 Passivation Layer
The dynamic output characteristics of the p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors (E-mode HEMTs) with and without SiO2 passivation layer were demonstrated in this paper. The results indicate that the devices with passivation can effectively suppress the phenomenon of current collapse.
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09:15 - 09:30
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Paper No. 2015-SAT-S1003-O002
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| Heng Li
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Impacts of internal quantum efficiency on V-shape pits in InGaN multiple quantum wells
We clarified the impact of formation of different sizes V-shape pits in multiple quantum wells (MQWs) on internal quantum efficiency (IQE). The nanoscale structure was measured by SEM and the optical properties was measured by low temperature photoluminescence system. The relation between IQE and V-pits structure was clarified by combining experimental results and theoretical analysis.
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09:30 - 09:45
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Paper No. 2015-SAT-S1003-O003
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| Zone-Lin Wu
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Increased light extraction efficiency of flip-chip light-emitting diode by anodic aluminum oxide
Highly optical performances of flip-chip light-emitting diodes, employing anodic aluminum oxide patterned sapphire substrates with various pitch (50-130 nm) of textures on the surfaces of the substrates, are evaluated. At 350 mA, the chip (280 nm) delivers higher power of 420 mW in comparison to the characteristics in the cases of bare samples (410 mW) .
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09:45 - 10:00
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Paper No. 2015-SAT-S1003-O004
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| Kun Cheng Liao
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The Influence of Water Attachment for Graphene and MoS2 Transistors
The influence of water attachment to graphene and MoS2 transistors are investigated. The additional p-type doping for graphene and unchanged threshold voltages for the MoS2 transistor suggest that the phenomenon of preferential H-atom attachment of water molecular to the graphene channel does not take place on the MoS2 surface.
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10:00 - 10:15
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Paper No. 2015-SAT-S1003-O005
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| Kuan-Lin Lee
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Investigation of Solid-State Dye-Sensitized Solar Cells with Graphene electronic transport layer by radio-frequency magnetron sputtering
The graphene films as electronic transport layer were prepared in soild-state dye-sensitized solar cells (SDSSCs) by radio frequency magnetron sputtering. The nanostructure graphene electronic transport layer thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to fluorine-doped tin oxide (FTO) glass.
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10:15 - 10:30
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Paper No. 2015-SAT-S1003-O006
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| Yu Hsun Chou
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Characteristics of solution processed organic-inorganic halide perovskite lasers
In this work, we successfully demonstrated the laser operation of organic-inorganic halide perovskite thin film by two-step solution process. The excellent optical properties showed that perovskite is a promising candidate for developing novel light-emitting devices compared with conventional semiconductor materials.
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