Session Index

Thin Film Technology and Optical Engineering

Semiconductor Film
Saturday, Dec. 5, 2015  09:00-10:30
Chair: Shiuh Chao (趙煦),Ta-Jen Yen (嚴大任)
Room: Delta 109(1F)
Notes: N/A
09:00 - 09:15 Paper No.  2015-SAT-S1003-O001
Shin-Yi Ho Enhancement Mode AlGaN/GaN High Electron Mobility Transistors with Low Current Collapse Using SiO2 Passivation Layer


The dynamic output characteristics of the p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors (E-mode HEMTs) with and without SiO2 passivation layer were demonstrated in this paper. The results indicate that the devices with passivation can effectively suppress the phenomenon of current collapse.

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09:15 - 09:30 Paper No.  2015-SAT-S1003-O002
Heng Li Impacts of internal quantum efficiency on V-shape pits in InGaN multiple quantum wells


We clarified the impact of formation of different sizes V-shape pits in multiple quantum wells (MQWs) on internal quantum efficiency (IQE). The nanoscale structure was measured by SEM and the optical properties was measured by low temperature photoluminescence system. The relation between IQE and V-pits structure was clarified by combining experimental results and theoretical analysis.

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09:30 - 09:45 Paper No.  2015-SAT-S1003-O003
Zone-Lin Wu Increased light extraction efficiency of flip-chip light-emitting diode by anodic aluminum oxide


Highly optical performances of flip-chip light-emitting diodes, employing anodic aluminum oxide patterned sapphire substrates with various pitch (50-130 nm) of textures on the surfaces of the substrates, are evaluated. At 350 mA, the chip (280 nm) delivers higher power of 420 mW in comparison to the characteristics in the cases of bare samples (410 mW) .

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09:45 - 10:00 Paper No.  2015-SAT-S1003-O004
Kun Cheng Liao The Influence of Water Attachment for Graphene and MoS2 Transistors


The influence of water attachment to graphene and MoS2 transistors are investigated. The additional p-type doping for graphene and unchanged threshold voltages for the MoS2 transistor suggest that the phenomenon of preferential H-atom attachment of water molecular to the graphene channel does not take place on the MoS2 surface.

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10:00 - 10:15 Paper No.  2015-SAT-S1003-O005
Kuan-Lin Lee Investigation of Solid-State Dye-Sensitized Solar Cells with Graphene electronic transport layer by radio-frequency magnetron sputtering


The graphene films as electronic transport layer were prepared in soild-state dye-sensitized solar cells (SDSSCs) by radio frequency magnetron sputtering. The nanostructure graphene electronic transport layer thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to fluorine-doped tin oxide (FTO) glass.

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10:15 - 10:30 Paper No.  2015-SAT-S1003-O006
Yu Hsun Chou Characteristics of solution processed organic-inorganic halide perovskite lasers


In this work, we successfully demonstrated the laser operation of organic-inorganic halide perovskite thin film by two-step solution process. The excellent optical properties showed that perovskite is a promising candidate for developing novel light-emitting devices compared with conventional semiconductor materials.

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