Session Index

Thin Film Technology and Optical Engineering

Poster Session Ⅰ
Friday, Dec. 4, 2015  11:30-12:30
Chair:
Room:
Notes: N/A
Paper No.  2015-FRI-P1001-P001
Peng-Yin Su Award Candidate Organic Ultraviolet Photodetectors with Nanocomposite Layer


The organic UV PDs with the m-MTDATA:LiF nanocomposite layer were, for the first time, fabricated and characterized successfully. With a 5 V applied bias, it was found that the leakage current of the fabricated PD with the m-MTDATA:LiF nanocomposite layer was 2.12×10-11 A. Furthermore, organic UV PDs with a m-MTDATA:LiF nanocomposite layer have a larger UVC-to-UVB rejection ratio. the NEP and D* from the proposed UV PD were 2.49×10-10 W and 3.29×108 cmHz0.5W-1.

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Paper No.  2015-FRI-P1001-P002
Jen-Chuan Dai Award Candidate Narrow line-width electroluminescence at cutoff wavelength from bilayer organic waveguide devices


Abstract— The BSB-Cz/PVK bilayer OLED that exhibits the external quantum efficiency of >1% and anisotropic electroluminescence with spectrally narrowed edge emission at the cutoff wavelength is demonstrated. When tuning the cutoff wavelength to match the peak gain of BSB-Cz, a particularly narrow edge emission (~5 nm) is achieved.

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Paper No.  2015-FRI-P1001-P003
Nai-xiang Lin Award Candidate an improvement of optical monitoring system for ion beam sputtering deposition


Optical monitoring techniques have been paid a great deal of attention for film deposition. In this study, we improve optical monitoring system constructed two conjugate systems to achieve that the monitoring spot of less than 3 mm and the lower energy loss.

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Paper No.  2015-FRI-P1001-P004
Wei-Bi Liao Award Candidate Research of Diamond Like Carbon Transparent Thin films


DLC-SiOx thin films were prepared by RF magnetron sputtering and DC negative self-bias with carbon target in Ar, CH4 and HMDSO containing gas mixtures. Hardness improved with sp3 ratio by increasing self-bias. The existence of SiOx in DLC films can enhance optical transparency of the films.

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Paper No.  2015-FRI-P1001-P005
Hsin-Ying Lee Award Candidate Multi-Component Quaternary Indium Tin Aluminum Oxide Films Deposited Using Co-Sputtering System


The indium tin aluminum oxide (ITAO) films were deposited using magnetron RF cosputtering system. The ITAO films revealed good transmittance in the visible spectrum region. The sheet resistance change and the oxygen content change of the ITAO films for aging time of 10 days were only 0.95% and 5.2%, respectively.

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Paper No.  2015-FRI-P1001-P006
YU CHUN FANG Award Candidate Broadband polarization-insensitive thin film absorbers


A perfect absorber which absorption can cover whole visible wavelength range is demonstrated. The absorption efficiency is higher than 90 % and the absorption is insensitive to the polarization and the angle of incidence. Moreover, the thickness of films could be adjusted to control the absorption efficiency.

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Paper No.  2015-FRI-P1001-P007
Chi-Tsung Tsai Award Candidate Characteristic analyses of AlxGa1-xN templates grown by HVPE for UV-LED applications


Effect of the Al precursor flow on characteristics of AlxGa1-xN layers was systematically explored. At a high Al precursor flow, AlxGa1-xN has the best crystallinity and the highest transmittance at ultraviolet wavelengths. Compared with a 370 nm-LED on GaN/sapphire, the internal quantum efficiency shows 127% improvement after using AlxGa1-xN/sapphire template.

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Paper No.  2015-FRI-P1001-P008
Ming-jie Li Award Candidate Low temperature growth of boron-doped germanium thin films by electron cyclotron resonance chemical vapor deposition


Boron-doped Ge films was deposited on glass substrates at 180 °C by ECR-CVD(electron cyclotron resonance chemical vapor deposition). When we keep the flow rate of source gasses B2H6 constant and GeH4 raised, the mobility and the carrier concentration increases, germanium phase transform from amorphous to polycrystalline.

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Paper No.  2015-FRI-P1001-P009
Chih-Yung Hsiao Surface enhanced Raman scattering from a silver island film on a designed optical thin film


The localized surface plasmon resonance in the metal nanostructure is generally believed to be the main mechanisms of the SERS enhancement. In this work, optical thin films underneath a silver island film were designed to enhance the electric field on the surface. We deposited the Ag mirror and the SiO2 film on the silicon substrate then deposited the silver island films on the surface of SiO2 film. Through this method the surface electric field will be enhanced. A lot of narrow gaps between the silver islands were observed. In the SERS measurement, compared with the silver island films deposited on a bare Si substrate, the silver island films on the optical thin film has stronger SERS signals.

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Paper No.  2015-FRI-P1001-P010
Po-Chih Chen The Residual Stress Reduction and Transition in Si3N4/SiO2 Multilayers


Residual stress evolution in Si3N4/SiO2 quarter-wave stack and it combined with an additional underlayer MgF2 are compared. The aging effect on the residual stress in two kinds of quarterwave stacks is investigated. We also observed a residual stress evolution in multilayers from compressive to tensile stress as the time elapsed.

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Paper No.  2015-FRI-P1001-P011
Saki Narita Deposition of CeO2 optical thin films by electron beam evaporation


CeO2 is transparent from the infrared region to the visible light region and has a low environmental impact with a low refractive index material. The optical absorption of CeO2 films was decreased by introducing oxygen during deposition. The crystal structure of films changed at a substrate temperature of 200 °C.

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Paper No.  2015-FRI-P1001-P012
Cheng-Chung Jaing Mask Designs of Thickness Uniformity Suitable for Three Coating Materials


The design of a mask suitable for three coating materials above the coating source to produce films of uniform thickness was investigated The method is much faster, easier, and requires less trial and error than other empirical methods for determining the mask.

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Paper No.  2015-FRI-P1001-P013
Hsin Her Yu Biologically inspired visual system based on insect compound eyes


A 2D Polydimethylsiloxane (PDMS) concave mold was fabricated by a soft-lithography method, and then a flat Polymethylmethacrylate (PMMA) replicating film was made. Bionic convex compound eyes films with different heights were prepared by a thermopressing. The optical performance of the convex compound eyes film was investigated.

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Paper No.  2015-FRI-P1001-P014
Qiu-Xiang Huang Reduced threshold of optically pumped amplified spontaneous emission from bilayer organic waveguide devices


We present a detailed study of the optically pumped emission from the BSB-Cz/PVK bilayer waveguide devices. By optical pumping we demonstrate that PVK as a spacer between fluorescent BSB-Cz and ITO electrode allows the significant reduction of the threshold for amplified spontaneous emission of BSB-Cz.

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Paper No.  2015-FRI-P1001-P015
Naoya Tajima Highly Adhesive Optical Thin Films Deposited by Sputtering and Vacuum Deposition on Acrylic Substrates Molded by Different Methods


We deposited optical thin films by sputtering and vacuum deposition on acrylic substrates molded by resin casting, injection molding, or extrusion. Highly adhesive optical thin films were obtained by our technique regardless of the molding method used for the acrylic substrates.

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Paper No.  2015-FRI-P1001-P016
Sheng-Po Chang Effect of Surface Modification by SAMs on the Indium Zinc Oxide film UV photodetector


The IZO thin films were deposited on a quartz substrate by RF-sputtering. The surface analysis showed the IZO film deposited in 10% oxygen ratio have the smoother surface that could be the optimum parameter to fabricate the MSM PD. In order to improve the response characteristics of the device, APTMS was deposited onto IZO to improve its surface states, which could reduce the negative influences of vacancies and then suppress the leakage current path for IZO PD.

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Paper No.  2015-FRI-P1001-P017
You Chen Lin Cu2ZnSnSe4 thin film prepared by polyetheramine-solution method and rapid thermal annealing


The CZTSe precursor films were prepared by rapid thermal annealing. XRD, Raman, SEM, EDS and UV–vis showed that the CZTSe thin films were successfully of selenization. The technique is a low-cost and environmentally friendly production of CZTSe for photovoltaic device.

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Paper No.  2015-FRI-P1001-P018
Ming Lun Lee Ti/Al/Ti/Au Ohmic contacts to AlGaN/GaN heterostructure with Si Ion implantation


In this study, metal contacts of Ti/Al/Ti/Au formed on undoped Al0.31Ga0.69N/GaN heterostructure with Si ion implantation were characterized. The metal contacts exhibited in-situ Ohmic I-V characteristics when the Ti/Al/Ti/Au contacts deposited on the Si-implanted Al0.31Ga0.69N layers without subsequent thermal alloying. Specific contact resistance of metal contacts on the Al0.31Ga0.69N layers was further reduced as low as 6.7×10-5 Ω-cm2 when the samples were thermally alloyed at 900°C for 30 seconds in N2 ambient

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Paper No.  2015-FRI-P1001-P019
Chao Yu Lin Low Temperature Growth High Quality Germanium Film On Silicon Substrate


This study shows a method to grow high quality Germanium (Ge) film under low temperature (240℃) by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). The full width at half maximum (FWHM) is 620 arcsec and the strain is 0.1%. This work is promising to realize monolithically integrated optoelectronics.

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Paper No.  2015-FRI-P1001-P020
Ming-Syuan Chen Hysteresis on a liquid crystal and polymer composite film


We have been developed and studied a liquid crystal and polymer composite film (LCPCF) whose surface properties and contact angle hysteresis are electrically switchable. The droplet on LCPCF has to overcome the hysteresis to move. This study can help us to understand the droplet motion on LCPCF with the applied electric fields.

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Paper No.  2015-FRI-P1001-P021
Jhin-Yan Guo Novel Electron-Injection Layer for Improving the Accuracy in the Space-Charge Limited Current Model and Time-of-Flight Techniques


A novel electron-injection layer composed of bathocuproine and fullerene was developed for improving the accuracy and reliability in determining electron mobility in space-charge limited current and time-of-flight measurements. Electron mobility measured by both techniques is in good agreement. A series of temperature-dependent measurement was conducted for ensuring the injection property.

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