The organic UV PDs with the m-MTDATA:LiF nanocomposite layer were, for the first time, fabricated and characterized successfully. With a 5 V applied bias, it was found that the leakage current of the fabricated PD with the m-MTDATA:LiF nanocomposite layer was 2.12×10-11 A. Furthermore, organic UV PDs with a m-MTDATA:LiF nanocomposite layer have a larger UVC-to-UVB rejection ratio. the NEP and D* from the proposed UV PD were 2.49×10-10 W and 3.29×108 cmHz0.5W-1.

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Abstract— The BSB-Cz/PVK bilayer OLED that exhibits the external quantum efficiency of >1% and anisotropic electroluminescence with spectrally narrowed edge emission at the cutoff wavelength is demonstrated. When tuning the cutoff wavelength to match the peak gain of BSB-Cz, a particularly narrow edge emission (~5 nm) is achieved.

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Optical monitoring techniques have been paid a great deal of attention for film deposition. In this study, we improve optical monitoring system constructed two conjugate systems to achieve that the monitoring spot of less than 3 mm and the lower energy loss.

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DLC-SiOx thin films were prepared by RF magnetron sputtering and DC negative self-bias with carbon target in Ar, CH4 and HMDSO containing gas mixtures. Hardness improved with sp3 ratio by increasing self-bias. The existence of SiOx in DLC films can enhance optical transparency of the films.

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The indium tin aluminum oxide (ITAO) films were deposited using magnetron RF cosputtering system. The ITAO films revealed good transmittance in the visible spectrum region. The sheet resistance change and the oxygen content change of the ITAO films for aging time of 10 days were only 0.95% and 5.2%, respectively.

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A perfect absorber which absorption can cover whole visible wavelength range is demonstrated. The absorption efficiency is higher than 90 % and the absorption is insensitive to the polarization and the angle of incidence. Moreover, the thickness of films could be adjusted to control the absorption efficiency.

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Effect of the Al precursor flow on characteristics of AlxGa1-xN layers was systematically explored. At a high Al precursor flow, AlxGa1-xN has the best crystallinity and the highest transmittance at ultraviolet wavelengths. Compared with a 370 nm-LED on GaN/sapphire, the internal quantum efficiency shows 127% improvement after using AlxGa1-xN/sapphire template.

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Boron-doped Ge films was deposited on glass substrates at 180 °C by ECR-CVD(electron cyclotron resonance chemical vapor deposition). When we keep the flow rate of source gasses B2H6 constant and GeH4 raised, the mobility and the carrier concentration increases, germanium phase transform from amorphous to polycrystalline.

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The localized surface plasmon resonance in the metal nanostructure is generally believed to be the main mechanisms of the SERS enhancement. In this work, optical thin films underneath a silver island film were designed to enhance the electric field on the surface. We deposited the Ag mirror and the SiO2 film on the silicon substrate then deposited the silver island films on the surface of SiO2 film. Through this method the surface electric field will be enhanced. A lot of narrow gaps between the silver islands were observed. In the SERS measurement, compared with the silver island films deposited on a bare Si substrate, the silver island films on the optical thin film has stronger SERS signals.

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Residual stress evolution in Si3N4/SiO2 quarter-wave stack and it combined with an additional underlayer MgF2 are compared. The aging effect on the residual stress in two kinds of quarterwave stacks is investigated. We also observed a residual stress evolution in multilayers from compressive to tensile stress as the time elapsed.

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CeO2 is transparent from the infrared region to the visible light region and has a low environmental impact with a low refractive index material. The optical absorption of CeO2 films was decreased by introducing oxygen during deposition. The crystal structure of films changed at a substrate temperature of 200 °C.

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The design of a mask suitable for three coating materials above the coating source to produce films of uniform thickness was investigated The method is much faster, easier, and requires less trial and error than other empirical methods for determining the mask.

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A 2D Polydimethylsiloxane (PDMS) concave mold was fabricated by a soft-lithography method, and then a flat Polymethylmethacrylate (PMMA) replicating film was made. Bionic convex compound eyes films with different heights were prepared by a thermopressing. The optical performance of the convex compound eyes film was investigated.

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We present a detailed study of the optically pumped emission from the BSB-Cz/PVK bilayer waveguide devices. By optical pumping we demonstrate that PVK as a spacer between fluorescent BSB-Cz and ITO electrode allows the significant reduction of the threshold for amplified spontaneous emission of BSB-Cz.

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We deposited optical thin films by sputtering and vacuum deposition on acrylic substrates molded by resin casting, injection molding, or extrusion. Highly adhesive optical thin films were obtained by our technique regardless of the molding method used for the acrylic substrates.

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The IZO thin films were deposited on a quartz substrate by RF-sputtering. The surface analysis showed the IZO film deposited in 10% oxygen ratio have the smoother surface that could be the optimum parameter to fabricate the MSM PD. In order to improve the response characteristics of the device, APTMS was deposited onto IZO to improve its surface states, which could reduce the negative influences of vacancies and then suppress the leakage current path for IZO PD.

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The CZTSe precursor films were prepared by rapid thermal annealing. XRD, Raman, SEM, EDS and UV–vis showed that the CZTSe thin films were successfully of selenization. The technique is a low-cost and environmentally friendly production of CZTSe for photovoltaic device.

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In this study, metal contacts of Ti/Al/Ti/Au formed on undoped Al0.31Ga0.69N/GaN heterostructure with Si ion implantation were characterized. The metal contacts exhibited in-situ Ohmic I-V characteristics when the Ti/Al/Ti/Au contacts deposited on the Si-implanted Al0.31Ga0.69N layers without subsequent thermal alloying. Specific contact resistance of metal contacts on the Al0.31Ga0.69N layers was further reduced as low as 6.7×10-5 Ω-cm2 when the samples were thermally alloyed at 900°C for 30 seconds in N2 ambient

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This study shows a method to grow high quality Germanium (Ge) film under low temperature (240℃) by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). The full width at half maximum (FWHM) is 620 arcsec and the strain is 0.1%. This work is promising to realize monolithically integrated optoelectronics.

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We have been developed and studied a liquid crystal and polymer composite film (LCPCF) whose surface properties and contact angle hysteresis are electrically switchable. The droplet on LCPCF has to overcome the hysteresis to move. This study can help us to understand the droplet motion on LCPCF with the applied electric fields.

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A novel electron-injection layer composed of bathocuproine and fullerene was developed for improving the accuracy and reliability in determining electron mobility in space-charge limited current and time-of-flight measurements. Electron mobility measured by both techniques is in good agreement. A series of temperature-dependent measurement was conducted for ensuring the injection property.

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