Cyanine dye J-aggregate films are a class of absorbing and luminescent materials which have been widely applied in the polariton-based research. Here we systematically study the DEDOC cyanine dyes J-aggregate films made by layer-by-layer assembly and spin-coating processes to establish a clear correlation between film structure and absorption as well as luminescence properties.

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The Aluminum nitride films were deposited by DC-, pulsed- and high power pulsed- magnetron sputtering. The refraction indices, extinction coefficients and residual stress of AlNx films were analyzed via spectroscopy and Twyman-Green interferometer.

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In this study, a Pentacene based organic phototransistor (PT) decorated with silver nano-dots (Ag nano-dots) in bottom gate structure was demonstrated. With the Ag nano-dots, this device exploits surface plasmon which confining the photon in semiconductor. Organic phototransistor light detection performance can be improved by confining the photon through the Ag nano-dots in the semiconductor. The responsivity at Vg=0V is 20.33, 38.93, 26.19, and 31.6 mA/W with the Ag nano-dots nominal thickness 0, 1, 2, and 4 nm respectively.

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Abstract—Ambipolar OFETs based on a bilayer structure of n-type DFH-4T and p-type DNTT small molecules are investigated. Detailed electrical and structural analyses reveal that the DFH-4T layer supports the growth of a high-quality DNTT crystal network and forms a large organic/metal contact area are the key attributes leading to an overall excellent ambipolar behavior.

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We demonstrate ultra-thin time-of-flight (TOF) sample for determining carrier mobility with a sample thickness of only 300 nm. Hole mobility can be determined using photovoltaic materials as a charge-generation layer that confines carriers and produces holes into the TOF sample. Electron mobility is measured using an electron-injection layer.

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Microstructure of TiOx and Ag based multilayer on flexible substrate served as In-free electrode was investigated. The TiOx/Ag/TiOx (TAT) with enough Ag thickness (> 15 nm) exhibits a low resistance and high UV-transmittance for transparent electrode. Dependence of Ag thickness, TiOx bottom layer, and TiOx overlayer on the optical and electrical properties of TAT were explored. The FOM of 3.810-2 (-1) at the wavelength of 550 nm for a TAT with an 18-nm-thick Ag layer and TiOx of 20 nm is achieved.

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Niobium titanium oxide is a new material for optical thin films with high refractive indexes. We investigate depositing niobium titanium oxide thin films on plastic substrates. Films with good characteristics were obtained at a substrate temperature of 50 °C and an oxygen flow rate of 30 sccm.

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We research the relationship between internal structure and hardness in TiO2 optical thin films. The diameter of the columns in the columnar structure of the film is related to the hardness.

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We present the simulation and measurement of residual stress in Si3N4/SiO2 quarter-wave stacks prepared by the IF reactive magnetron sputtering. A thin-film residual stress prediction system combined with MATLAB software is proposed. Different quarter-wave stacks with a high and low refractive index materials have been evaluated the residual stress.

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Extended X-ray absorption fine structure has been used to study the bond length, and electronic structure of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition.

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Electrochemical impedance spectrum analyzer can Study interfacial electron kinetic in solution and electrochemical charge materials and interfaces between mobile behavior. In this study, we use electrochemical impedance spectroscopy analysis to confirm the corresponding reacting mechanisms to five resonance peaks in the bode plots of dye-sensitized solar cells.

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The InAlN films were deposited with different growth pressure parameters by MOCVD. The In content of InAlN epilayers was increased from 6% to 25% with increasing the growth pressure to 500 mbar. The inhomogeneity of In composition was observed at the beginning of the InAlN growth as examined by TEM.

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A blue mirror is designed to possess a nearly anti-glare effect in the wide-angle range 0-55o, which can be simultaneous used for the interior and exterior rear-view car mirrors enabling the car driver to have a nearly anti-glare performance when he watch via different rear-view blue mirrors.

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In this study, a displacement sensor with a non-coherent light source is developed and analyzed. A varifocal lens is equipped into a confocal displacement sensor to measure the displacement of the test target.

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We present a cost-effective approach for the surface roughness measurement of thin films based on gray level co-occurrence matrix (GLCM) and entropy criterion. The measurement of the RMS surface roughness is performed by a Michelson-type microscopic interferometer combined with the self-development MATLAB program to analysis the captured interference fringe patterns.

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Nanostructured Al-doped ZnO thin films were grown on p-Si (100) and glass substrates by using 355 nm and 532 nm laser. The morphologies of AZO films and the current-voltage characteristics of AZO/Si were investigated. The structure shown photoconductivity when illuminated by using a broadband light source.

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Nitrogen (N) K-edge x-ray absorption near-edge structure (XANES) were performed to elucidate the electronic structure of two set of thin films of InN prepared by plasma assisted molecular beam epitaxy (PA-MBE).

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We prepared indium-tin-oxide (ITO) films deposited at various pressure. We observed a increase in sheet resistance with increasing pressure. The deposition rate, mobility and concentration of the ITO films decreased with the increase of the pressure. Finally, we got the high mobility of 44.8cm2/Vs at 0 mTorr.

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Indium tin oxide films have a high-quality of the physical and chemical properties. In DC sputtering process, the process parameters have significant effect on the optical electrical, and mechanical properties of thin films. The influences of the oxygen flow rate on the optical, mechanical, electrical properties and surface roughness of DC sputtering ITO thin films are investigated experimentally.

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Silicon nitride films deposited by pulsed magnetron sputtering have been investigated. The influence of substrate rotation speed on optical constants, surface roughness and stress of silicon nitride films was discussed. The substrate rotation resulted in lower refractive index, but the stress of films was 7-times lower than no rotational substrate.

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X-ray absorption near edge structure (XANES) had been measured on In-rich InGaN thin film grown on sapphire (0001) with In0.5Ga0.5N buffer layer by high-pressure Chemical Vapor Deposition (HPCVD), which composition had been detected from Electron Probe Micro-Analysis (EPMA). Furthermore, we use FEFF9 to simulate the wurtize structure InN and In0.5Ga0.5N. We use X-ray Diffraction to study the In-rich InGaN and buffer layer In0.5Ga0.5N crystal structure as well.

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Cesium iodide doped Na excited by UV, X-ray and γ-ray can transform invisible light into visible light. So that, this useful scintillator commonly are usually used in medical testing, industrial inspection, and atomic science. In our studies, the cesium iodide film structural and luminous efficiency were investigated many years. Cesium iodide and sodium iodide films are susceptible to moisture. The moisture makes the film deliquescence, which changes its structure, and reduced the converting efficiency of visible light. Therefore, the as-deposited CsI: Na films were deposited Al film and the organic film as a protective layer to reduce the structural changes of deliquescence. The moisture resistant can be illustrated by Fourier transform infrared spectroscopy. The morphologies of the cross-section of the film were observed by scanning electron microscope for its deliquescence change. Moreover, we examined the fluorescence intensities of CsI and its CsI: Na samples excited by UV and X-rays and exposed to air for 50 days. The CsI: Na film protected by a parylene N layer has an excellent moisture resistant and its columnar structure is unchanged.

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The internal stress in an optical thin film can be controlled by optimizing IAD output in the IAD process. Both tensile stress and compressive stress can be created by IAD. Also, the chemical bonding state of Ti may affect the stress behavior.

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The p-type monocrystalline Ge thin films were deposited on silicon substrate by using the method of magnetron sputtering. P-type Ge thin film with the resistivity < 0.01 ohm-cm-3 and the carrier concentration ~5x1019cm-3 were achieved after post annealing. Finally Ge/Si solar cell was fabricated with the best device performances of Voc 261.83 mV , Isc 10.78 mA, FF = 54.4% and conversion efficiency 1.92%

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Abstract—In this paper, a GaN-based light emitting diode (LED) with P-type superlattices was grown by using metal-organic chemical-vapor deposition (MOCVD). The temperature dependences of the photoluminescence (PL) spectra and the decay times were employed to study the radiative and the nonrediative recombination processes of the excition in the range of 10 ~ 300K.

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The composition-dependent optical and mechanical properties of TiO2-Si composite films prepared by electron-beam evaporation at a substrate temperature of 200 °C were investigated with spectrophotometer, spectroscopic ellipsometer, phase-shifting Fizeau interferometer, and AFM, respectively. The various compositions were obtained by mixing the starting materials of Ti3O5 and Si in a crucible.

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Polymer cholesteric liquid crystal (PCLC) flakes selectively reflect the specific wavelength, which is dependent on the concentration of chiral reactive monomer dispersed in the host nematic LC. The response time of the PCLC flake suspended into a host fluid is critically dependent on the fluid material and electric frequency

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In this study, hydrogenated microcrystalline silicon thin films (μc-si:H) were fabricated on plastic substrate PC with various ion current by ion-assisted deposition of RF magnetron sputtering. The optical properties and the micro-crystallization were the best when the films was prepared at the ion current of ion source 0.4 A.

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Experimental results are shown in the sputtering power 100W, argon pressure 2.5mtorr, pass oxygen to 10%,Optical transmittance and electrical properties are excellent compared to other parameters. In this case the resistivity of 6x10-4Ω-cm, transmittance reaches 88%.Grains size about 16nm,Bandgap is 3.9eV.The surface is very smooth, with an average roughness at around 0.7nm.

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Electrochromic Prussian blue (PB) film is electrodeposited on the electrode of Indium Tin Oxide (ITO). Cyclic voltammetry is performed while the optical transmission of the film is measured. The contrast of the optical transmission between oxidation and reduction states degrades insignificantly after 30 cycles.

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Using a light emitting material to explore the effects on the micro-cavity of higher order by the source in light emitting layer. To find out variations of light intensity, the light source viewed from different locations and different angle of incidence. The results can be found in significant changes in light intensity.

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A positively charged polyelectrolyte was absorbed on the electrode of a thin film solar cell by self assembly process, the results shown to effectively passivate the surface of the solar cells.

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